AI News, Flexible UV Imagers for Drones
Flexible UV Imagers for Drones
Seeing images captured byan ultravioletsensor is like looking at the world with new eyes.
UV images reveal spots that presage rot on mushrooms, dark lines along flower petals that guide insects to nectar, and clouds of acetone in water.
silicon doesn’t absorb ultraviolet wavelengths very well, and other semiconductors that play well with ultraviolet light make slow imagers with low frame rates.
This week at the International Electron Devices Meeting in San Francisco, two research groups presented ultrathin, flexible UV sensor designs they hope will help make these devices more widespread.
Xu says his philosophy is, “Why not help silicon do better?” With that in mind, his team is pairingthe semiconductor with graphene, which absorbs UV light like a champ.
To make flexible silicon-graphene UV photodetectors, the Zhejiang University group uses etching and rubber stamps to transfer ultrathin silicon microstructures to a flexible plastic substrate, then coats the silicon with graphene and adds electrodes.
Session 8: Optoelectronics, Displays, and Imagers Thin Film Transistors and Detectors
printable device structure design is introduced to fabricate low voltage organic field effect transistor (OFET) of steep subthreshold (80 mV/dec) using thick gate dielectric layers and high throughput printing/coating processes.
Ang, National University of Singapore We demonstrate a novel black phosphorus carbide (b-PC) phototransistor with a wide absorption spectrum that spans most molecular fingerprints till 8,000 nm and a tunable responsivity and response time at a wavelength of 2,004 nm.
The b- PC phototransistor achieves a high responsivity of 2,163 A/W and a short response time of 5.6 ps, showing promise for sensing applications in the coming age of the internet-of-things (IoT).
He, King Abdullah University of Science and Technology (KAUST), * University of Maryland Flexible solar-blind deep-ultraviolet sensors consisting of BN nanosheets show ultrahigh thermal conductivity (146 W/m K), fast recovery-time (0.393 s), and excellent flexibility and bending durability.
The proposed UV photodetector exhibits high photo-responsivity, fast time response, high specific detectivity, and UV/Vis rejection ratio of about 100, comparable to the state-of-the-art Schottky photodetectors 4:30 PM 8.7
Pi, Zhejiang University By taking advantage of the fast photo-carriers transfer between graphene and silicon-quantum- dots, along with infrared tunable Schottky- barrier height of graphene-silicon junction, a novel Schottky- PN cascade heterojunction based photodetector has been demonstrated.